Tunable active silicon for coupler linearity improvement and reconfiguration

A packaged module comprising:

• an electromagnetic coupler assembly, the electromagnetic coupler assembly including
• a silicon on insulator (SOI) wafer including a handle wafer having an oxide layer disposed on a first surface thereof,
• a layer of active semiconductor disposed on the oxide layer,
• a voltage terminal disposed on the layer of active semiconductor to receive a supply voltage,
• a layer of dielectric material disposed on the layer of active semiconductor,
• a main transmission line disposed on the layer of dielectric material, and
• a coupled transmission line disposed on the layer of dielectric material and configured to provide a coupled signal on the coupled line responsive to receipt of an input signal received on the main transmission line, at least a portion of one of the main transmission line and the coupled transmission line being disposed above at least a portion of the layer of active semiconductor.

An electromagnetic coupler assembly comprising:

• a handle wafer including an oxide layer disposed on a first surface thereof;
• an active semiconductor layer disposed on at least a portion of the oxide layer, the active semiconductor layer including a voltage terminal to receive a supply voltage;
• a dielectric layer disposed on the active semiconductor layer;
• and
• a coupler disposed on the dielectric layer, the active semiconductor layer extending at least partially below the coupler to electrically isolate the handle wafer from the coupler based on application of the supply voltage.

A method of fabricating an electromagnetic coupler assembly comprising:

• depositing a layer of dielectric material on an upper surface of active semiconductor of a silicon on insulator (SOI) wafer including a layer of the active semiconductor, a buried oxide layer disposed beneath the layer of the active semiconductor, and a handle wafer disposed beneath the buried oxide layer;
• forming an electrical contact with the layer of the active semiconductor;
• forming a main transmission line above the layer of dielectric material;
• and
• forming a coupled transmission line above the layer of dielectric material, the coupled transmission line configured to provide a coupled signal on the coupled transmission line responsive to receipt of an input signal received on the main transmission line, at least a portion of one of the main transmission line and the coupled transmission line being formed above at least a portion of the layer of active semiconductor.