Stacked Die Ground Shield
AssigneeMicrochip Technology Incorporated
InventorsGregory Dix, Lee Furey, Rohan Raghunathan
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AssigneeMicrochip Technology Incorporated
InventorsGregory Dix, Lee Furey, Rohan Raghunathan
Estimating the term…
The present disclosure relates to semiconductor devices. Embodiments of the teachings thereof may include processes for manufacturing of semiconductor devices and the devices themselves. For example, some embodiments may include an integrated circuit package comprising: a lead frame; a first die mounted on the lead frame in flip-chip fashion, with a frontside of the first die connected to the lead frame; wherein the first die comprises an oxide layer deposited on a backside of the first die and a back metal layer deposited on the oxide layer; and a second die mounted on the back metal layer of the first die.
An integrated circuit package comprising:
A circuit comprising:
A method for manufacturing a semiconductor device, comprising:
A method of operating an integrated circuit package including a lead frame, a first die mounted on the lead frame in flip-chip fashion, with the front of the first die connected to the lead frame, wherein the first die comprises an oxide layer deposited on the back of the first die and a back metal layer deposited on the oxide layer, a second die mounted on the back metal layer of the first die, the back metal layer wire bonded to a finger of the lead frame, wherein the oxide layer and the back metal layer both cover a full extent of the backside of the first die and do not extend beyond edges of the first die and a voltage source providing a shielding voltage fed to the back metal layer through the finger, the method comprising:
Dependencies are inferred from the claim text.