Through via structure for step coverage improvement
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Yen FANG, Jung-Chih TSAO, Yao-Hsiang LIANG, Yu-Ku LIN
Life of this patent
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Yen FANG, Jung-Chih TSAO, Yao-Hsiang LIANG, Yu-Ku LIN
Estimating the term…
A semiconductor device includes a substrate, a dielectric structure, a barrier layer, a glue layer, a copper seed layer and a copper layer. The dielectric structure is disposed over the substrate. The dielectric structure has a through via hole passing through the dielectric structure, and a sidewall of the through via hole includes at least one indentation. The barrier layer conformally covers the sidewall and a bottom of the through via hole. The glue layer conformally covers the barrier layer. The copper seed layer conformally covers the glue layer. The copper layer covers the copper seed layer and fills the through via hole.
A semiconductor device, comprising:
A semiconductor device, comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.