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US 2017/0287835 A1Published application
Combined Source And Base Contact For A Field Effect Transistor
AssigneeMicrochip Technology Incorporated
InventorsDan Grimm, Gregory Dix
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AssigneeMicrochip Technology Incorporated
InventorsDan Grimm, Gregory Dix
Estimating the term…
The present disclosure relates to semiconductor devices. The teachings thereof may be embodied in metal oxide semiconductor field effect transistors (MOSFET) and methods for their manufacture. Some embodiments may include: depositing a base within an epitaxial layer; implanting a source implant extending into the base, wherein the epitaxial layer, the base, and the source implant form a continuous plane surface; depositing an insulating layer on the continuous plane surface forming a gate in contact with both the epitaxial layer and the base; opening a contact groove through the insulating layer to expose a central portion of the source implant; depositing a layer of photoresist on top of the insulating layer above exposed portions of the source implant; patterning a set of stripes in the photoresist, each stripe perpendicular to the contact groove; etching the set of stripes with an etch chemistry selective to the insulating layer; and filling the contact groove with a conductive material creating a base-source contact groove reaching through the insulating layer to the surface of the source implant and comprising a plurality of sections spaced apart from each other reaching through the source implant into the base.
A method for manufacturing a field effect transistor with a transistor cell, the method comprising:
A field effect transistor with a transistor cell, the field effect transistor comprising:
A device comprising:
Dependencies are inferred from the claim text.