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US 2017/0287830 A1Published application
Treating copper interconnects
AssigneeInternational Business Machines Corporation
InventorsConal E. Murray, Chih-Chao Yang
Life of this patent
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Abstract
Techniques relate to treating metallic interconnects of semiconductors. A metallic interconnect is formed in a layer. A metallic cap is disposed on top of the metallic interconnect. Any metallic residue, formed during the disposing of the metallic cap, is converted into insulating material.
Claims20
A semiconductor device having metallic interconnects, the semiconductor device comprising:
- a metallic interconnect formed in a layer;
- a metallic cap disposed on top of the metallic interconnect;
- and
- insulating material formed at one or more locations on the layer, wherein the insulating material includes metallic residue that has been treated, wherein the insulating material is formed on sides of the metallic cap.
1 more element
Dependencies are inferred from the claim text.