Method and ic structure for increasing pitch between gates

A method for increasing a pitch between gates, the method comprising:

• forming a first gate, a second gate, and a dummy gate on a substrate, wherein the dummy gate is positioned laterally between the first and second gates;
• forming a first insulator over the substrate;
• selectively etching the dummy gate to form a gap;
• forming a second insulator within the gap;
• selectively removing the first gate and the second gate from a first gate opening and a second gate opening within the first insulator;
• forming a first replacement metal gate (RMG) on the first gate opening of the substrate;
• and
• forming a second RMG on the second gate opening of the substrate, wherein the gap is positioned laterally between the first RMG and the second RMG.