US 2017/0287813 A1 · BODY CONTACTS FOR FIELD-EFFECT TRANSISTORS

Abstract

Field-effect transistor (FET) devices are described herein that include one or more body contacts implemented near source, gate, drain (S/G/D) assemblies to improve the influence of a voltage applied at the body contact on the S/G/D assemblies. For example, body contacts can be implemented between S/G/D assemblies rather than on the ends of such assemblies. This can advantageously improve body contact influence on the S/G/D assemblies while maintaining a targeted size for the FET device.

Claims20

Dependent claims

A field-effect transistor (FET) comprising:

a first assembly of source, gate, and drain implemented on a first active region;
a second assembly of source, gate, and drain implemented on a second active region;
and
a first body contact implemented between the first assembly and the second assembly.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

15/475,510Filed 31 Mar 2017

Priority

31 Mar 2016

Published

5 Oct 2017

Term ends

Not estimatedThe source records don’t support an estimate.

Classification19 codes

H10W 20/40
Interconnections in chips, wafers or substrates: interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or…
H04B 1/40
Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of…: circuits
H10D 30/6711
For preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect:…
H10D 30/6729
Thin-film transistors [TFT]: characterised by the electrodes

Body contacts for field-effect transistors

Life of this patent

Body contacts for field-effect transistors

Life of this patent

Abstract

Claims20