Semiconductor device and manufacturing method thereof
AssigneeRenesas Electronics Corporation
InventorsYoshiki YAMAMOTO, Tetsuya YOSHIDA, Koetsu SAWAI
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Abstract
When VC inspection for a TEG is performed, it is easily detected whether any failure of a contact plug occurs or not by increasing an emission intensity of a contact plug, so that reliability of a semiconductor device is improved. An element structure of an SRAM is formed on an SOI substrate in a chip region. Also, in a TEG region, an element structure of an SRAM in which a contact plug is connected to a semiconductor substrate is formed on the semiconductor substrate exposed from an SOI layer and a BOX film as a TEG used for the VC inspection.
Claims5
1-14. (canceled)
A method of manufacturing a semiconductor device, comprising:
- (a) providing a substrate having a semiconductor substrate, a buried oxide film formed on the semiconductor substrate, and a semiconductor layer formed on the insulating layer, and having a first region and a second region;
- (b) after (a), exposing a portion of the semiconductor substrate, which is located in the second region, by removing a portion of the semiconductor layer, which is located in the second region, and a portion of the buried oxide film, which is located in the second region;
- (c) after (b), forming a first gate electrode on a portion of the semiconductor layer, which is located in the first region, via a first gate insulating film;
- (d) after (c), implanting a first impurity to each of the portion of the semiconductor layer and the portion of the semiconductor substrate;
- (e) after (d), covering each of the portion of the semiconductor layer and the portion of the semiconductor substrate with an interlayer insulating film;
- (f) after (e), forming a first contact hole and a second contact hole over the portion of the semiconductor layer and the portion of the semiconductor substrate by opening a first portion of the interlayer insulating film, which is located in the first region, and a second portion of the interlayer insulating film, which is located in the second region, respectively;
- (g) after (f), forming a first contact plug and a second contact plug by embedding an inside of the first contact hole and an inside of the second contact hole with a first conductor film and a second conductor film, respectively;
- and
- (h) after (g), irradiating the second contact plug with an electron ray.
Dependencies are inferred from the claim text.