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US 2017/0287794 A1Published application
Methods for manufacturing semiconductor device and for detecting end point of dry etching
AssigneeRenesas Electronics Corporation
InventorsToshikazu HANAWA, Kazuhide FUKAYA, Kentaro YAMADA
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Abstract
A via hole is accurately formed in an interlayer insulating film over a metal wiring. Of emission spectra of plasma to be used for dry etching of the interlayer insulating film, the emission intensities of at least CO, CN, and AlF are monitored such that an end point of the dry etching of the interlayer insulating film is detected based on the emission intensities thereof.
Claims15
A manufacturing method of a semiconductor device, comprising the steps of:
- (a) forming, over a main surface of a semiconductor substrate, laminated wiring including, sequentially from below, three layers of a titanium nitride film, an aluminum film, and a titanium nitride film;
- (b) forming an insulating film over the laminated wiring so as to cover the laminated wiring;
- (c) coating a photoresist film over the insulating film in order to form a via hole pattern by lithography;
- and
- (d) forming a via hole in the insulating film by dry etching using the via hole pattern as a mask,
- wherein, when the dry etching of the insulating film is performed, an end point of the dry etching of the insulating film is detected by monitoring emission intensities of at least CO and CN.
3 more elements
A method of detecting an end point of dry etching comprising:
- monitoring emission intensities of at least CO and CN of emission spectra of plasma to be used for dry etching;
- and
- detecting an end point of the dry etching based on the monitored emission intensities of CO and CN.
A manufacturing method of a semiconductor device, comprising the steps of:
- (a) forming, over a main surface of a semiconductor substrate, laminated wiring including, sequentially from below, three layers of a titanium nitride film, an aluminum film, and a titanium nitride film;
- (b) forming an insulating film over the laminated wiring so as to cover the laminated wiring;
- (c) coating a photoresist film over the insulating film in order to form a via hole pattern by lithography;
- and
- (d) forming a via hole in the insulating film by dry etching using the via hole pattern as a mask,
- wherein, when the dry etching of the insulating film is performed, an end point of the dry etching of the insulating film is detected by monitoring emission intensities of at least two of CO, CN and AlF.
3 more elements
Dependencies are inferred from the claim text.