General four-port on-wafer high frequency de-embedding method

A general four-port on-wafer high frequency de-embedding method of passivity, reciprocity and symmetry, comprising the following steps:

• 3.1:
• fabricating, together with a device under test (DUT) to be de-embedded, N de-embedding dummies of passivity, reciprocity and symmetry;
• 3.2:
• measuring to obtain the whole Y-parameter admittance matrix YM of said DUT and the whole Y-parameter admittance matrix YMj (j=1,2, . . . , N) of each of said de-embedding dummies;
• 3.3:
• for each de-embedding dummy, building a model considering the distributive nature of high frequency characteristics of the de-embedding dummy;
• 3.4:
• obtaining the intrinsic Y-parameter admittance matrices YAj(p1, p2, . . . pM)(j=1,2, . . . , N) of said N de-embedding dummies by calculation or simulation by using said models,
• where, p1, p2, . . . , pM are M model parameters of models on which said calculation or simulation is based, and 2N−6≧M;
• 3.5:
• solving an equation set YMj=Yee−Yei (YAj(p1, p2, . . . pM)+Yii)−1 Yei(j=1,2, . . . , N) for the elements of three sub-matrices Yee, Yii and Yei of the admittance matrix Y of the parasitic four-port network to be stripped in de-embedding and said model parameters p1, p2, . . . , pM as unknowns,
• wherein, as shown in the following equation, Yee, Yii and Yei, as three sub-matrices, form the admittance matrix Y of said parasitic four-port network:
• Y
• =
• [
• Y
• ee
• Y
• ei
• Y
• ie
• Y
• ii
• ]
• ;
• and
• 3.6:
• substituting Yee, Yii and Yei obtained in Step 3.5 and the whole Y-parameter admittance matrix YM of said DUT obtained by measurement in Step 3.2 into Equation YA=−Yii−Yei(YM−Yee)−1Yei, to obtain by calculation the intrinsic Y-parameter admittance matrix YA of said DUT.

The special general four-port on-wafer high frequency de-embedding method according to claim 3, characterized in that solving the equation set YMj=Yee−Yei(YAj(p1, p2, . . . pM)+Yii)−1Yei(j=1,2, . . . , N for the elements of three sub-matrices Yee, Yii and Yei of the admittance matrix Y of the parasitic four-port network to be stripped in de-embedding and said model parameters p1, p2, . . . , pM as unknowns in Step 3.5 comprises the following steps:

• 4.1:
• assigning initial values to said model parameters p1, p2, . . . pM, respectively;
• 4.2:
• obtaining the values of YAj(p1, p2, . . . pM)(j=1,2, . . . , N) by calculation or simulation by using the assigned model parameters p1, p2, . . . pM;
• 4.3:
• after solving an equation set YMj=Yee−Yei(YAj(p1, p2, . . . pM)+Yii)−1 Yei(j=1,2,3) by using the known measurement values YMj(j=1,2,3) of first three de-embedding dummies and said calculated or simulated values YAj(p1, p2, . . . pM) (j=1,2,3) to obtain the values of Yee, Yii and Yei (it is unnecessary to completely solve Yei, referring to claim 5.4), substituting the known measurement values YMj (j=4,5, . . . , N) of the remaining de-embedding dummies and said obtained values of Yee, Yii and Yei into YDj=−Yii−Yei(YMj−Yee)−1Yei (j=4,5, . . . , N) to obtain by calculation the de-embedded Y-parameter admittance matrices YDj(j=4,5, . . . , N) of said remaining de-embedding dummies;
• 4.4:
• comparing the calculated YDj(j=4,5, . . . , N) with the calculated or simulated values YAj(p1, p2, . . . pM)(j=4,5, . . . , N) of the corresponding remaining de-embedding dummies already obtained in Step 4.1,
• determining final values for undetermined model parameters p1, p2, . . . pM which are necessary for the calculation or simulation of the de-embedding dummies, if a difference between the two meets the set error standard, and
• correcting the values of the model parameters p1, p2, . . . pM and reassigning them, and then turning back to Step 4.2, if the difference between the two does not meet the set error standard.