Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
AssigneeTokyo Electron Limited
InventorsBrian J. Coppa, Deepak Vedhachalam, Francois C. Dassapa
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Abstract
Described herein are architectures, platforms and methods for acquiring optical emission spectra from an optical emission spectroscopy system by flowing a dry cleaning gas into a plasma processing chamber of the plasma processing system and igniting a plasma in the plasma processing chamber to initiate the waferless dry cleaning process.
Claims20
An in situ method of monitoring and controlling a waferless dry cleaning (WLDC) process in a plasma processing tool, the method comprising:
- initiating a production process of a wafer lot;
- collecting in-situ monitoring data during the production process;
- performing in-situ data analysis of the wafer lot;
- and
- adjusting parameters of the WLDC process based on the in-situ monitoring data.
A non-transitory machine-accessible storage medium having instructions stored thereon which cause a data processing system to perform a method for monitoring and controlling a waferless dry cleaning process in a plasma processing tool, the method comprising:
- starting a production process of a wafer lot;
- gathering in-situ monitoring data during the production process;
- analyzing in-situ data of the wafer lot;
- and
- recalculating parameters of the WLDC process based on the in-situ monitoring data.
Dependencies are inferred from the claim text.