Method of manufacturing semiconductor device
AssigneeHitachi Kokusai Electric Inc.
InventorArito OGAWA
Life of this patent
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Abstract
A process of forming a first mask on a first region of a metal film formed on a surface of a substrate, a process of modulating a work function of a first exposed region of the metal film, using plasma of a first process gas, a process of removing the first mask, a process of forming a second mask on a second region of the metal film, and a process of modulating the work function of a second exposed region of the metal film, using plasma of a second process gas are executed.
Claims15
A method of manufacturing a semiconductor device comprising, wherein (a) to (e) are sequentially performed in the following order:
- (a) forming a first mask on a first region of a metal film formed on a surface of a substrate;
- (b) modulating a work function of a first exposed region of the metal film, using plasma of a first process gas;
- (c) removing the first mask;
- (d) forming a second mask on a second region of the metal film;
- and
- (e) modulating a work function of a second exposed region of the metal film, using plasma of a second process gas.
A method of manufacturing a semiconductor device comprising sequentially performing the following steps:
- (a) providing a processing chamber with a substrate having a metal film formed on a surface, and having a first mask formed on a first region of the surface of the metal film;
- (b) modulating a work function of a first exposed region of the metal film, the first exposed region being exposed to a space in the processing chamber, using plasma of a first process gas;
- (c) providing the processing chamber with the substrate from which the first mask is removed, and having a second mask formed on a second region of the surface of the metal film;
- and
- (d) modulating a work function of a second exposed region of the metal film, the second exposed region being exposed to the space in the processing chamber, using plasma of a second process gas.
A method of manufacturing a semiconductor device comprising sequentially performing the following steps:
- (a) loading a substrate into a processing chamber, the substrate having a metal film formed on a surface, and having a first mask formed on a first region of the surface of the metal film;
- (b) modulating a work function of a first exposed region of the metal film by exciting a first process gas in the processing chamber into plasma, the first exposed region being exposed to a space in the processing chamber;
- (c) unloading the substrate from the processing chamber;
- (d) loading the substrate into the processing chamber, the substrate from which the first mask is removed, and having a second mask formed on a second region of the surface of the metal film;
- and
- (e) modulating a work function of a second exposed region of the metal film by exciting a second process gas in the processing chamber into plasma, the second exposed region being exposed to the space in the processing chamber.
Dependencies are inferred from the claim text.