Ir assisted fan-out wafer level packaging using silicon handler

A method of forming a semiconductor packaging structure, said method comprising:

• providing a support structure comprising a silicon handler wafer having a first surface and a second surface opposite the first surface, a release layer located above the first surface of the silicon handler wafer, and a redistribution layer located on a surface of the release layer;
• forming a fan-out wafer level package within and upon said redistribution layer;
• and
• removing silicon handler wafer by laser abating said release layer with infrared radiation, wherein said infrared radiation first enters said silicon handler wafer from said second surface.

A support structure for use in fan-out wafer level packaging, said support structure comprising:

• a silicon handler wafer having a first surface and a second surface opposite said first surface;
• a release layer located above said first surface of said silicon handler wafer;
• and
• a layer selected from the group consisting of an adhesive layer and a redistribution layer located on a surface of said release layer.