Methods of forming self-aligned contact structures by work function material layer recessing and the resulting devices

A method, comprising:

• forming a plurality of placeholder gate structures including a first placeholder gate structure having a first width, and a second placeholder gate structure having a second width less than said first width;
• forming spacers adjacent said plurality of placeholder gate structures;
• forming a first dielectric layer above said plurality of placeholder gate structures;
• planarizing said first dielectric layer to expose said plurality of placeholder gate structures;
• removing said first and second placeholder gate structures to define a plurality of gate cavities including a first gate cavity defined by removing said first placeholder gate structure and a second gate cavity defined by removing said second placeholder gate structure;
• forming a work function material layer in said plurality of gate cavities, wherein said work function material layer fills said second gate cavity to define a first gate structure;
• forming a first conductive material in said first gate cavity above said work function material layer to substantially fill said first gate cavity to define a second gate structure;
• forming a first contact recess in said first dielectric layer between said first and second gate structures;
• forming a second conductive material in said first contact recess;
• recessing said work function material layer in said first and second gate structures selectively to said first and second conductive materials to define a plurality of cap recesses in said first and second gate structures adjacent first and second upper surfaces of said first and second conductive materials, respectively;
• and
• forming a cap layer comprising dielectric material in said plurality of cap recesses.

A device, comprising:

• a first gate structure, comprising a work function material layer lining a first gate cavity defined in a dielectric layer and a first conductive material positioned above and laterally adjacent said work function material layer;
• a first cap recess defined in said work function material layer laterally adjacent a top surface of said first conductive material and filled with a dielectric material;
• a second gate structure having a first width less than a second width of said first gate structure, comprising a work function material layer filling a second gate cavity defined in said dielectric layer;
• a second cap recess defined in said work function material layer of said second gate structure filled with said dielectric material;
• and
• a contact embedded in said dielectric layer laterally adjacent said first gate structure.