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US 2017/0287779 A1Published application
Method of Forming Contact Metal
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Hsien Huang, Hong-Mao Lee, Hsien-Lung Yang, Yu-Kai Chen, Wei-Jung Lin
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Abstract
A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.
Claims20
A device comprising:
- a source/drain feature disposed on a substrate;
- a silicide layer disposed on the source/drain feature;
- a dielectric layer disposed over the substrate;
- a titanium nitride (TiN) layer extending through dielectric layer to the silicide layer;
- and
- a metal layer extending through the dielectric layer to the TiN layer.
3 more elements
A device comprising:
- a first gate stack and a second gate stack disposed over a substrate;
- a source/drain feature disposed over the substrate between the first and second gate stacks;
- a dielectric layer disposed over the substrate;
- a silicide layer disposed directly on the source/drain feature;
- a titanium nitride (TiN) layer extending through the dielectric layer to the silicide layer;
- and
- a conductive layer extending through the dielectric layer to the TiN layer.
4 more elements
A device comprising:
- a source/drain feature disposed over a substrate;
- a dielectric layer disposed over the substrate;
- a self-aligned silicide layer disposed directly on the source/drain feature;
- a titanium nitride (TiN) layer extending through the dielectric layer such that the TiN layer is disposed on the self-aligned silicide layer;
- and
- a metal layer extending through the dielectric layer such that the metal layer is disposed on the TiN layer.
3 more elements
Dependencies are inferred from the claim text.