Method and apparatus for forming silicon film and storage medium

A silicon film forming apparatus for forming a silicon film in a recess with respect to a target substrate that having on its surface an insulating film in which the recess is formed therein, the apparatus comprising:

• a process chamber configured to receive the target substrate;
• a gas supply unit configured to supply a predetermined gas into the process chamber;
• a heating mechanism configured to heat an interior of the process chamber;
• an exhaust mechanism configured to evacuate and depressurize the process chamber;
• and
• a controller configured to control the gas supply unit, the heating mechanism, and the exhaust mechanism, wherein
• the controller controls such that:
• the process chamber is controlled to a predetermined depressurized state by the exhaust mechanism and to a predetermined temperature by the heating mechanism;
• a first silicon film is formed to fill the recess by supplying a Silicon raw material gas into the process chamber from the gas supply unit;
• the first silicon film is etched by supplying a halogen-containing etching gas into the process chamber from the gas supply unit such that surfaces of the insulating film on the surface of the target substrate and on an upper portion of an inner wall of the recess are exposed and such that the first silicon film remains in a bottom portion of the recess;
• and
• a second silicon film is grown up in a bottom-up growth manner on the first silicon film that remains in the bottom portion of the recess by supplying a Silicon raw material gas onto the target substrate after the etching.