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US 2017/0287774 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeRenesas Electronics Corporation
InventorTakayuki ABE
Life of this patent
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Abstract
A first silicon oxide film is formed on the inner wall of a deep trench by oxidizing the inner wall of the deep trench while heating the inner wall. Then, a second silicon oxide film is formed using at least one of atmospheric pressure CVD and plasma CVD so that the second silicon oxide film covers the first silicon oxide film in the deep trench.
Claims12
A method for manufacturing a semiconductor device, the method comprising:
- preparing a semiconductor substrate made of a material containing silicon, the semiconductor substrate including a substrate region of a first conductivity type and an epitaxial region of a second conductivity type, the epitaxial region being located on the substrate region;
- forming a trench in a surface of the semiconductor substrate, the trench extending through the epitaxial region to the substrate region;
- forming a first silicon oxide film on an inner wall of the trench by oxidizing the inner wall of the trench while heating the inner wall of the trench;
- forming a second silicon oxide film using at least one of atmospheric pressure CVD and plasma CVD so that the second silicon oxide film covers the first silicon oxide film in the trench;
- and
- forming a buried layer so that the buried layer is buried in the trench.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate including
- a surface,
- a substrate region of a first conductivity type,
- an epitaxial region of a second conductivity type, the epitaxial region being located on a side adjacent to the surface with respect to the substrate region, and
- a trench extending from the surface through the epitaxial region to the substrate region;
- an insulating film disposed on the surface of the semiconductor substrate, the insulating film having an opening leading to the trench;
- a first silicon oxide film in contact with the semiconductor substrate at a sidewall of the trench;
- a second silicon oxide film in contact with a sidewall of the insulating film in the opening and in contact with the first silicon oxide film in the trench;
- and
- a buried layer buried in the trench and in the opening,
- the first silicon oxide film including a first portion along the sidewall of the trench and a second portion along a bottom wall of the trench,
- the second portion being bent with respect to the first portion,
- the second silicon oxide film being disposed on the second portion.
10 more elements
Dependencies are inferred from the claim text.