Method for manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising:

• (a) forming a circuit on a first surface of a semiconductor wafer, the semiconductor wafer having a second surface opposite to first surface;
• (b) grinding the second surface of the semiconductor wafer such that a first part is thinner than a second part surrounding the first part;
• (c) attaching a bonding surface of a first tape to the first surface of the semiconductor wafer;
• (d) separating the first part from the second part by cutting a part of the first part with a first rotary blade in contact with the second surface of the first part, while the semiconductor wafer is held by the first tape;
• (e) after (d), removing the second part;
• (f) attaching a bonding surface of a second tape to the second surface side of the first part of the semiconductor wafer while the first tape remains attached to the semiconductor wafer;
• and
• (g) after (f), peeling off the first tape from the semiconductor wafer,
• wherein (d) comprises:
• (d1) forming a trench by performing a cutting process at the second surface side of the first part by moving the first rotary blade to draw an arc along an outer edge of the first part of the semiconductor wafer while rotating the rotary blade;
• and
• (d2) after (d1), performing another cutting process by moving the first rotary blade along the trench to further cut the first part in a thickness direction thereof, thereby separating the first part from the second part;
• wherein the first tape includes:
• a first base material, and
• a first adhesive layer provided at one surface of the first base material and attached to the first surface of the semiconductor,
• wherein the second tape includes:
• a second base material, and
• a second adhesive layer provided at one surface of the second base material and attached to the second surface of the first part of the semiconductor wafer, and
• wherein the first adhesive layer is thicker than the second adhesive layer.

A method of manufacturing a semiconductor device, comprising:

• (a) forming a circuit on a first surface of a semiconductor wafer, the semiconductor wafer having a second surface opposite to the first surface;
• (b) grinding the second surface of the semiconductor wafer such that a first part is thinner than a second part surrounding the first part;
• (c) attaching a bonding surface of a first tape to the first surface of the semiconductor wafer;
• (d) separating the first part from the second part by cutting a part of the first part with a rotary blade in contact with the second surface of the first part, while the semiconductor wafer is held by the first tape;
• and
• (e) forming a mark for identifying a direction of the semiconductor wafer, in part of the first tape,
• wherein (d) comprises:
• (d1) forming a trench by performing a cutting process at the second surface side of the first part by moving the rotary blade to draw an arc along an outer edge of the first part of the semiconductor wafer while rotating the rotary blade;
• and
• (d2) after (d1), performing another cutting process by moving the rotary blade along the trench to further cut the first part in a thickness direction thereof, thereby separating the first part from the second part,
• wherein the first tape includes:
• a first base material, and
• a first adhesive layer provided at one surface of the first base material and attached to the first surface of the semiconductor, and
• wherein the first adhesive layer comprises a UV curable resin.