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US 2017/0287723 A1Published application
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsHuang-Ren Wei, Hsuan-Sheng Lin
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Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; performing a first etching process to remove part of the fin-shaped structure for forming a trench; and performing a second etching process to extend the depth of the trench and divide the fin-shaped structure into a first portion and a second portion.
Claims9
A method for fabricating semiconductor device, comprising:
- providing a substrate;
- forming a fin-shaped structure on the substrate;
- performing a first etching process to remove part of the fin-shaped structure for forming a trench;
- and
- performing a second etching process to extend the depth of the trench and divide the fin-shaped structure into a first portion and a second portion.
2 more elements
Dependencies are inferred from the claim text.