Method of Fabricating a Tunnel Oxide Layer and a Tunnel Oxide Layer for a Semiconductor Device
AssigneeX-Fab Semiconductor Foundries AG
InventorsEng Gek HEE, Ka Siong WISLEY UNG
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Abstract
A method of fabricating a tunnel oxide layer for a semiconductor memory device, the method comprising: fabricating on a substrate a first oxide layer by an in-situ-steam-generation process; and fabricating at least one further oxide layer by a furnace oxidation process, wherein during fabrication of the at least one further oxide layer, reactive gases penetrate the first oxide layer and react with the silicon substrate to form at least a first portion of the at least one further oxide layer beneath the first oxide layer.
Claims19
1-22. (canceled)
A method of fabricating a tunnel oxide layer for a semiconductor memory device, the method comprising:
- fabricating on a substrate a first oxide layer;
- and
- fabricating at least one further oxide layer by a furnace oxidation type process,
- wherein during fabrication of the at least one further oxide layer, reactive gases penetrate the first oxide layer and react with the substrate to form at least a first portion of the at least one further oxide layer beneath the first oxide layer, and
- wherein the first oxide layer and the at least one further oxide layer are fabricated by different process types.
A method of making a semiconductor memory device comprising a tunnel oxide layer, the method comprising:
- fabricating on a substrate a first oxide layer;
- and
- fabricating at least one further oxide layer by a furnace oxidation type process,
- wherein during fabrication of the at least one further oxide layer, reactive gases penetrate the first oxide layer and react with the substrate to form at least a first portion of the at least one further oxide layer beneath the first oxide layer, and
- wherein the first oxide layer and the at least one further oxide layer are fabricated by different process types.
A semiconductor device comprising a tunnel oxide layer manufactured by:
- fabricating on a substrate a first oxide layer;
- and
- fabricating at least one further oxide layer by a furnace oxidation type process,
- wherein during fabrication of the at least one further oxide layer, reactive gases penetrate the first oxide layer and react with the substrate to form at least a first portion of the at least one further oxide layer beneath the first oxide layer, and
- wherein the first oxide layer and the at least one further oxide layer are fabricated by different process types.
Dependencies are inferred from the claim text.