Method of manufacturing semiconductor device
AssigneeHitachi Kokusai Electric Inc.
InventorYukinao KAGA
Life of this patent
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Abstract
A method of manufacturing a semiconductor device, includes rotating a substrate support tool accommodated in a process chamber and configured to support a substrate with a rail, and supplying a process gas including a first gas to the substrate from a first gas supply hole positioned at an outer side of the substrate in a horizontal direction while rotating the substrate support tool. In the act of supplying the process gas, the first gas is supplied to the substrate in a first period in which the rail is not positioned between the first gas supply hole and the substrate in the horizontal direction.
Claims10
A method of manufacturing a semiconductor device, comprising:
- rotating a substrate support tool accommodated in a process chamber and configured to support a substrate with a rail;
- and
- supplying a process gas including a first gas to the substrate from a first gas supply hole positioned at an outer side of the substrate in a horizontal direction while rotating the substrate support tool,
- wherein in the act of supplying the process gas, the first gas is supplied to the substrate in a first period in which the rail is not positioned between the first gas supply hole and the substrate in the horizontal direction.
A method of manufacturing a semiconductor device, comprising:
- rotating a substrate support tool accommodated in a process chamber and configured to support a substrate with a rail;
- and
- supplying a process gas including a first gas to the substrate from a first gas supply hole positioned at an outer side of the substrate in a horizontal direction while rotating the substrate support tool,
- wherein in the act of supplying the process gas, the first gas is supplied to the substrate in a period in which the rail does not exist at a position where an angle formed by a gas flow of the process gas injected from the first gas supply hole and a peripheral edge of the substrate is a right angle.
Dependencies are inferred from the claim text.