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AssigneeU.S.A. as represented by the Administrator of the National Aeronautics and Space Administration
InventorsSang H. Choi, Adam J. Duzik
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A method of forming an epitaxial layer on a substrate such as a sapphire wafer that does not readily absorb thermal radiation. The method includes coating a first side surface of the substrate with an energy-absorbing opaque material. The opaque material forms a thermally absorptive coating on the substrate. The coated substrate may be heated to remove contaminants from the thermally absorptive coating. The coated substrate is positioned in a vacuum deposition chamber and heated by directing radiative energy onto the thermally absorptive coating. An epitaxial layer such as GaN or SiGe is formed on a second side surface of the substrate opposite the thermally absorptive coating.
A method of forming an epitaxial layer on a sapphire substrate having first and second opposite side surfaces, the method comprising:
A method of forming an epitaxial layer on a substrate having first and second opposite side surfaces, the method comprising:
Dependencies are inferred from the claim text.