Method for manufacturing an soi wafer

A method for manufacturing an SOI wafer having an SOI layer including a thinning step to adjust an SOI film thickness of the SOI wafer, comprising the steps of:

• (A1) measuring the SOI film thickness of the SOI wafer having the SOI layer before the thinning step;
• (A2) determining a rotational position of the SOI wafer in the thinning step on the basis of a radial SOI film thickness distribution obtained in the measuring of the film thickness of the step (A1) and a previously determined radial stock removal distribution in the thinning step, and rotating the SOI wafer around the central axis thereof so as to bring the SOI wafer to the determined rotational position;
• and
• (A3) thinning the SOI layer of the SOI wafer rotated in the step (A2).

A method for manufacturing an SOI wafer having an SOI layer including a thinning step to adjust an SOI film thickness of the SOI wafer, comprising the steps of:

• (B0) heat treatment under an oxidizing gas atmosphere to form a thermal oxide film on a surface of the SOI layer;
• (B1) measuring the SOI film thickness of the SOI wafer having the thermal oxide film formed in the step (B0) with the thermal oxide film remaining;
• (B2) determining a rotational position of the SOI wafer in the thinning step on the basis of a radial SOI film thickness distribution obtained in the measuring of the film thickness of the step (B1) and a previously determined radial stock removal distribution in the thinning step, and rotating the SOI wafer around the central axis thereof so as to bring the SOI wafer to the determined rotational position;
• and
• (B3) thinning the SOI layer by batch processing cleaning which includes removing the thermal oxide film on the surface of the SOI layer and etching of the SOI layer of the SOI wafer rotated in the step (B2), with the etching amount of the SOI layer being controlled on the basis of the SOI film thickness obtained in the step (B1).

A method for manufacturing an SOI wafer having an SOI layer including a first thinning step and a second thinning step to adjust an SOI film thickness of the SOI wafer, comprising the steps of:

• (C0) heat treatment under an oxidizing gas atmosphere to form a thermal oxide film on a surface of the SOI layer;
• (C1) measuring the SOI film thickness of the SOI wafer having the thermal oxide film formed in the step (C0) with the thermal oxide film remaining;
• (C2) determining a rotational position of the SOI wafer in the first thinning step on the basis of a radial SOI film thickness distribution obtained in the measuring of the film thickness of the step (C1) and a previously determined radial stock removal distribution in the first thinning step, and rotating the SOI wafer around the central axis thereof so as to bring the SOI wafer to the determined rotational position;
• (C3) thinning the SOI layer to be thicker than a final target value of the film thickness as the first thinning step by batch processing cleaning which includes removing the thermal oxide film on the surface of the SOI layer and etching of the SOI layer of the SOI wafer rotated in the step (C2), with the etching amount of the SOI layer being controlled on the basis of the SOI film thickness obtained in the step (C1);
• (C4) measuring the SOI film thickness of the SOI wafer after the first thinning step;
• (C5) determining a rotational position of the SOI wafer in the second thinning step on the basis of a radial SOI film thickness distribution obtained in the measuring of the film thickness of the step (C4) and a previously determined radial stock removal distribution in the second thinning step, and rotating the SOI wafer around the central axis thereof so as to bring the SOI wafer to the determined rotational position;
• and
• (C6) thinning the SOI layer to be the final target value of the film thickness as the second thinning step by cleaning which includes etching of the SOI layer of the SOI wafer rotated in the step (C5), with the etching amount of the SOI layer being controlled on the basis of the SOI film thickness obtained in the step (C4).