Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A substrate processing apparatus, comprising:

• a process vessel configured to accommodate a plurality of substrates;
• a gas supply system configured to supply a gas into the process vessel;
• a support configured to arrange and support the plurality of substrates in a vertical direction, and support an adaptor located in at least one of an upper space and a lower space of a substrate arrangement region in which the plurality of substrates is arranged;
• a transfer part configured to transfer the support into the process vessel;
• and
• a control part configured to control the gas supply system, an exhaust system, and the transfer part to perform:
• (a) arranging and accommodating the plurality of substrates in the vertical direction in the process vessel by transferring the support that supports the plurality of substrates and the adaptor into the process vessel, and blocking the at least one of the upper space and the lower space of the substrate arrangement region by the adaptor;
• and
• (b) forming a film on each of the plurality of substrates by performing a cycle a predetermined number of times while blocking the at least one of the upper space and the lower space of the substrate arrangement region, the cycle including non-simultaneously performing:
• (b1) supplying a precursor gas to the plurality of substrates from a side of the substrate arrangement region in the process vessel;
• (b2) exhausting the precursor gas from the process vessel through an exhaust pipe;
• (b3) supplying a reaction gas to the plurality of substrates from the side of the substrate arrangement region in the process vessel;
• and
• (b4) exhausting the reaction gas from the process vessel through the exhaust pipe.

A computer-readable recording medium storing a program that causes a computer to perform a process, the process comprising:

• (a) arranging and accommodating a plurality of substrates in a vertical direction in a process vessel and blocking, by an adaptor, at least one of an upper space and a lower space of a substrate arrangement region in which the plurality of substrates is arranged;
• and
• (b) forming a film on each of the plurality of substrates by performing a cycle a predetermined number of times whiling blocking the at least one of the upper space and the lower space of the substrate arrangement region, the cycle including non-simultaneously performing:
• (b1) supplying a precursor gas to the plurality of substrates from a side of the substrate arrangement region in the process vessel;
• (b2) exhausting the precursor gas from the process vessel through an exhaust pipe;
• (b3) supplying a reaction gas to the plurality of substrates from the side of the substrate arrangement region in the process vessel;
• and
• (b4) exhausting the reaction gas from the process vessel through the exhaust pipe.