Photolithographic patterning of electronic devices

A method of patterning a device comprising:

• forming over a device substrate a fluorinated photopolymer layer comprising a radiation-absorbing dye and a fluorinated photopolymer having a solubility-altering reactive group;
• exposing the photopolymer layer to patterned radiation to form an exposed photopolymer layer having exposed and unexposed areas in accordance with the patterned radiation;
• and
• contacting the exposed photopolymer layer with a developing agent to remove the unexposed areas, thereby forming a developed structure having a first pattern of photopolymer covering the device substrate and a complementary second pattern of uncovered substrate corresponding to the removed unexposed areas, the developing agent comprising a first fluorinated solvent,
• wherein;
• the radiation provides a total exposure dose EXP (mJ/cm2) at an exposure wavelength λexp,
• the photopolymer layer has a thickness Tf(μm), an absorptivity α (absorbance/μm) at λexp and a speed point SP (mJ/cm2) under conditions used for the exposing and contacting with the developing agent, and
• a processing factor, P, is in a range of 0.1 to 0.95 wherein P=[log(EXP/SP)]/(α*Tf).

A fluorinated photopolymer composition, comprising:

• a fluorinated solvent;
• a radiation-absorbing dye;
• and
• a fluorinated photopolymer having a fluorine content of at least 10% by weight comprising one or more solubility-altering reactive groups, wherein
• a film formed from the composition has, after removal of the fluorinated solvent, an absorptivity of at least 0.3 absorbance units per μm of film thickness when measured at 365 nm, 405 nm or 436 nm.