Plasma processing apparatus and plasma processing method
AssigneeTokyo Electron Limited
InventorHitoshi KATO
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Abstract
A plasma processing apparatus includes a processing chamber, a rotation table installed in the processing chamber and configured to load a substrate on an upper surface of the rotation table along a circumferential direction of the rotation table, and a plasma generator including an antenna located above an upper surface of the processing chamber and installed to be able to move in a radial direction of the rotation table, wherein the plasma generator is configured to locally apply plasma to the rotation table in the radial direction.
Claims20
A plasma processing apparatus comprising:
- a processing chamber;
- a rotation table installed in the processing chamber and configured to load a substrate on an upper surface of the rotation table along a circumferential direction of the rotation table;
- and
- a first plasma generator including a first antenna located above an upper surface of the processing chamber and installed to move in a radial direction of the rotation table, wherein the first plasma generator is configured to locally apply plasma to the rotation table in the radial direction.
A plasma processing method comprising:
- rotating a rotation table installed in a processing chamber and having at least one substrate loaded on the rotation table along a circumferential direction of the rotation table;
- and
- generating plasma while moving an antenna installed above an upper surface of the processing chamber in a radial direction of the rotation table, and locally applying the plasma to the substrate in the radial direction of the rotation table.
Dependencies are inferred from the claim text.