Current constriction for spin torque mram
AssigneeInternational Business Machines Corporation
InventorsGuohan Hu, Daniel C. Worledge
Life of this patent
Estimating the term…
Abstract
Magnetoresistive random access memory devices include a first magnetic layer, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer. The tunnel barrier includes first regions having a first thickness and second regions having a second thickness that is greater than the first thickness. The tunnel barrier layer includes a first barrier layer formed from a first material and a second barrier layer formed from a second material different from the first material, the second layer being present only in the second regions.
Claims5
A magnetoresistive random access memory (MRAM) device, comprising:
- a first magnetic layer;
- a tunnel barrier layer formed on the first magnetic layer, the tunnel barrier comprising first regions having a first thickness and second regions having a second thickness that is greater than the first thickness, the tunnel barrier layer comprising a first barrier layer formed from a first material and a second barrier layer formed from a second material different from the first material, the second layer being present only in the second regions;
- and
- a second magnetic layer formed on the tunnel barrier layer.
Dependencies are inferred from the claim text.