Non-volatile memory device and programming method thereof

A non-volatile memory device comprising:

• a memory cell array including a plurality of memory cells arranged in a plurality of cell strings;
• an address decoder that is,
• connected to the plurality of memory cells of the plurality of cell strings through word lines,
• connected to string selection transistors of the plurality of cell strings through a string selection line, and
• connected to ground selection transistors of the plurality of cell strings through a ground selection line;
• and
• a program control logic configured cause, in a program operation,
• a first pass voltage to be applied to unselected word lines of the word lines during a first interval,
• a second pass voltage higher than the first pass voltage to be applied to the unselected word lines during a second interval,
• a discharge voltage lower than a program voltage to be applied to a selected word line of the word lines after the program voltage is applied to the selected word line during the first interval, and
• the program voltage to be applied to the selected word line during the second interval.

A method comprising:

• selecting a word line, from among a plurality of word lines of a non-volatile memory device, each word line of the plurality of word lines being connected to memory cells from among a plurality of non-volatile memory cells of the non-volatile memory device;
• performing, over first, second, and third sequential time intervals, a programming operation on memory cells connected to the selected word line by,
• applying a program voltage to the selected word line during the first time interval, applying a discharge voltage that is lower than the first program voltage to the selected word line during the second time interval, and applying a voltage that is higher than the discharge voltage to the selected word line during the third time interval, and
• applying a first pass voltage to unselected word lines during the first time interval, applying a second pass voltage that is higher than the first pass voltage to the unselected word lines during the third time interval, and applying a voltage that is lower than the second pass voltage to the unselected word lines during the second time interval,
• the unselected word lines being word lines, from among the plurality of word lines, other than the selected word line.