US 2017/0287540 A1 · CROSSPOINT ARRAY DECODER

Abstract

Example implementations disclosed herein can be used to decode memory elements in a crosspoint array. In one example implementation, a drain voltage is applied to a drain terminal of a field effect transistor switch for a selected row in the crosspoint array associated with the selected memory element. A bulk terminal of the field effect transistor switch for the selected row can be biased with a well voltage that is independent of the drain, source, or substrate voltages. In such examples, the gate terminal of the field effect transistor switch for the selected row can be driven with a gate voltage comprising the drain voltage and the well voltage. The drain voltage, the well voltage, and the gate voltage are selected to cause the field effect transistor switch for the selected row to operate as an ohmic switch.

Claims15

Dependent claims

A crosspoint array decoder comprising:

a first terminal to supply a first voltage;
a second terminal to supply a second voltage;
a plurality of row switching devices disposed in a first doped semiconductor well and coupled to the first terminal, each of the plurality of row switching devices coupled to a corresponding row line in a plurality of row lines in a crosspoint array to apply the first voltage;
a plurality of column switching devices disposed in a second doped semiconductor well and coupled to the second terminal, each of the plurality of column switching devices coupled to a corresponding column line in a plurality of column lines in the crosspoint array to apply the second voltage.

1 more element

Dependencies are inferred from the claim text.

Crosspoint array decoder

Life of this patent

Crosspoint array decoder

Life of this patent

Abstract

Claims15