Method and circuit for self-training of a reference voltage and memory system including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSeon-Kyoo LEE, Jeong-Don IHM, Byung-Hoon JEONG, Dae-Woon KANG
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AssigneeSamsung Electronics Co., Ltd.
InventorsSeon-Kyoo LEE, Jeong-Don IHM, Byung-Hoon JEONG, Dae-Woon KANG
Estimating the term…
A semiconductor device, includes at least a first memory chip, which includes at least a first buffer connected to receive an input signal and a reference voltage; at least a first reference voltage generator configured to output a reference voltage based on a first control code; and at least a first self-training circuit for determining an operational reference voltage to use during a normal mode of operation of the semiconductor device. An output from the first buffer is input to the first self-training circuit, the first control code is output from the first self-training circuit into the first reference voltage generator, and the first buffer, the first self-training circuit, and the first reference voltage generator form a loop.
A method of self-training of a reference voltage of a semiconductor device, the method comprising:
A semiconductor device, comprising:
19-20. (canceled)
22-30. (canceled)
A memory system comprising:
32-36. (canceled)
Dependencies are inferred from the claim text.