3d stackable hybrid phase change memory with improved endurance and non-volatility
AssigneeAlibaba Group Holding Limited
InventorShu LI
Life of this patent
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Abstract
Systems and methods for using PCM to implement a non-volatile memory solution characterized by high density, high capacity, enhanced endurance, and low power consumption are described. The PCM memory solutions described are thousands of time faster than NAND flash memory, and the endurance thereof is improved significantly compared to traditional PCM implementations. The frequency with which data is written to PCM is controlled to extend the useful life of the PCM. This is accomplished using assisting memories such as DRAM and NAND flash, for example, to adjust the time interval between subsequent PCM write operations.
Claims20
A memory system, comprising:
- a memory controller;
- a first storage tier coupled to the memory controller, comprising DRAM;
- a second storage tier coupled to the memory controller, comprising flash memory;
- and
- a third storage tier coupled to the memory controller, comprising phase change memory,
- wherein new data to be written to the memory system is written to DRAM, the new data and subsequent data are merged to generate a data chunk, the data chunk is divided into a plurality of data slices, a hash value is calculated for a data slice of the plurality of data slices, the data slice is written to flash memory when the calculated hash value for the respective data slice does not exist in a hash library, and a plurality of data slices written to the flash memory are written from the flash memory to the phase change memory.
A method for storing data using phase change memory, comprising:
- writing a first set of data to DRAM;
- merging the first set of data with subsequent data to generate a data chunk;
- dividing the data chunk into a plurality of data slices;
- calculating a hash value for a data slice of the plurality of data slices;
- determining if the hash value calculated for each respective data slice exists in a hash library;
- writing the data slice to flash memory when the calculated hash value for the respective data slice does not exist in the hash library;
- and
- writing a plurality of a plurality of data slices written to flash memory from the flash memory to the phase change memory.
A computer program product tangibly embodied in a computer-readable storage device and comprising instructions that when executed by a processor perform a method for storing data using phase change memory, the method comprising:
- writing a first set of data to DRAM;
- merging the first set of data with subsequent data to generate a data chunk;
- dividing the data chunk into a plurality of data slices;
- calculating a hash value for a data slice of the plurality of data slices;
- determining if the hash value calculated for each respective data slice exists in a hash library;
- writing the data slice to flash memory when the calculated hash value for the respective data slice does not exist in the hash library;
- and
- writing a plurality of data slices written to flash memory from the flash memory to the phase change memory.
Dependencies are inferred from the claim text.