Single-crystal silicon-carbide substrate and polishing solution
AssigneeAsahi Glass Company, Limited
InventorsIori YOSHIDA, Satoshi TAKEMIYA, Hiroyuki TOMONAGA
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Abstract
The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.
Claims14
A single-crystal silicon-carbide substrate comprising a principal surface having an atomic step-and-terrace structure, the atomic step-and-terrace structure comprising atomic steps and terraces derived from a crystal structure, wherein the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.
3-11. (canceled)
Dependencies are inferred from the claim text.