Vapor phase growth apparatus and vapor phase growth method
AssigneeNuFlare Technology, Inc.
InventorsHideshi TAKAHASHI, Yuusuke SATO
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AssigneeNuFlare Technology, Inc.
InventorsHideshi TAKAHASHI, Yuusuke SATO
Estimating the term…
A vapor phase growth apparatus includes: a reaction chamber; a support provided in the reaction chamber, the support on which a substrate can be placed; a first gas supply passage supplying first gas including ammonia; a second gas supply passage supplying second gas including metal-organic gas; a purge gas supply passage supplying purge gas including ammonia and at least one selected from nitrogen, hydrogen, and inert gas; and a shower head including first region and second region provided around the first region, process gas ejection holes provided in the first region, connected to the first gas supply passage and second gas supply passage and through which the first gas and second gas are supplied into the reaction chamber, a purge gas ejection hole provided in the second region, connected to the purge gas supply passage and through which purge gas is supplied into the reaction chamber.
A vapor phase growth apparatus comprising:
A vapor phase growth method for forming a semiconductor film on a surface of a substrate, the vapor phase growth method comprising:
Dependencies are inferred from the claim text.