Process for Producing Silicon Single Crystal
AssigneeTokuyama Corporation
InventorsKen Yasumura, Shoji Tachibana
Life of this patent
Estimating the term…
Abstract
In a process for producing a silicon single crystal in which carbon is incorporated in order to inhibit crystal defects, provided is a process which easily allows carbon to be mixed and dissolved into a silicon melt. The process for producing a silicon single crystal, which involves allowing a silicon single crystal to grow during its pulling-up from the silicon melt held in a crucible, uses as at least part of a silicon raw material, crushed materials of a polycrystalline silicon rod produced by Siemens process that are obtained by crushing an end of the rod in the vicinity contacting a carbon core wire holding member.
Claims13
-8. (canceled)
A process for producing a silicon single crystal by heating a silicon raw material held in a crucible to provide a silicon melt and allowing a silicon single crystal to grow during the pulling-up of a silicon single crystal ingot from the silicon melt, the process comprising using, as at least part of the silicon raw material, crushed materials of a polycrystalline silicon rod produced by Siemens process, the crushed materials obtained by crushing an end of the rod in the vicinity contacting a carbon core wire holding member,
- wherein a carbon concentration of the crusted materials is from 0.04 to 2.8 ppma, and
- the crushed materials are obtained by removing a core including both the carbon core wire holding member embedded into the rod end and a polycrystalline silicon surrounding the carbon core wire holding member from the rod end cut off from the polycrystalline silicon rod to give a rod end hollow body, and thereafter crushing the rod end hollow body.
Dependencies are inferred from the claim text.