Method for producing single crystal and method for producing silicon wafer
AssigneeSumco Corporation
InventorsYasuhito NARUSHIMA, Masayuki UTO, Toshimichi KUBOTA
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Abstract
A method for producing a single crystal includes: bringing a seed crystal into contact with a dopant-added melt, in which a red phosphorus is added to a silicon melt, such that a resistivity of the single crystal is 0.9 mΩ·cm or less and subsequently pulling up the seed crystal, to form a straight body of the single crystal; and withdrawing the single crystal from the dopant-added melt in a state that a temperature of an upper end of the straight body is 590 degrees C. or more.
Claims17
A method for producing a single crystal using a single-crystal pull-up apparatus comprising a chamber, a crucible disposed in the chamber and configured to receive a dopant-added melt in which red phosphorus is added to a silicon melt, and a pull-up section that is configured to pull up a seed crystal after bringing the seed crystal into contact with the dopant-added melt, the method comprising:
- bringing the seed crystal into contact with the dopant-added melt, in which the red phosphorus is added to the silicon melt, such that a resistivity of the single crystal is 0.9 mΩ·cm or less and subsequently pulling up the seed crystal, to form a straight body of the single crystal;
- and
- withdrawing the single crystal from the dopant-added melt in a state that a temperature of an upper end of the straight body is 590 degrees C. or more.
A method for producing a single crystal using a single-crystal pull-up apparatus comprising a chamber, a crucible disposed in the chamber and configured to receive a dopant-added melt in which red phosphorus is added to a silicon melt, and a pull-up section that is configured to pull up a seed crystal after bringing the seed crystal into contact with the dopant-added melt, the method comprising:
- bringing the seed crystal into contact with the dopant-added melt, in which the red phosphorus is added to the silicon melt, such that a resistivity of the single crystal is 0.9 mΩ·cm or less and subsequently pulling up the seed crystal, to form a straight body of the single crystal;
- and
- withdrawing the single crystal from the dopant-added melt in a state that a distance between an upper end of the straight body and a surface of the dopant-added melt is 730 mm or less.
Dependencies are inferred from the claim text.