Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
AssigneeHitachi Kokusai Electric Inc.
InventorTsuyoshi TAKEDA
Life of this patent
Estimating the term…
Abstract
In a process chamber in which a substrate is processed, a gas supply unit is in the process chamber and configured to supply a process gas that processes the substrate. A plasma generation unit is in the process chamber and configured to activate the process gas, and a buffer part is configured to form a buffer chamber accommodating at least a part of the plasma generation unit and include a gas supply hole through which the activated process gas is supplied to the substrate. The buffer part includes a groove portion in which a part of the gas supply hole is cut out.
Claims9
A substrate processing apparatus comprising:
- a process chamber in which a substrate is processed;
- a gas supply unit provided in the process chamber and configured to supply a process gas that processes the substrate;
- a plasma generation unit provided in the process chamber and configured to activate the process gas;
- and
- a buffer part configured to form a buffer chamber accommodating at least a part of the plasma generation unit and include a gas supply hole through which the activated process gas is supplied to the substrate,
- wherein the buffer part includes a groove portion in which a part of the gas supply hole is cut out.
A method of manufacturing a semiconductor device, comprising:
- loading a substrate into a process chamber of a substrate processing apparatus, the substrate processing apparatus including the process chamber in which the substrate is processed, a gas supply unit provided in the process chamber and configured to supply a process gas that processes the substrate, a plasma generation unit provided in the process chamber and configured to activate the process gas, and a buffer part configured to form a buffer chamber accommodating at least a part of the plasma generation unit and include a gas supply hole through which the activated process gas is supplied to the substrate, wherein the buffer part includes a groove portion in which a part of the gas supply hole is cut out;
- processing the substrate in the process chamber;
- and
- unloading the substrate from the process chamber.
A non-transitory computer-readable recording medium storing a program configured to cause a computer to perform:
- loading a substrate into a process chamber of a substrate processing apparatus, the substrate processing apparatus including the process chamber in which the substrate is processed, a gas supply unit provided in the process chamber and configured to supply a process gas that processes the substrate, a plasma generation unit provided in the process chamber and configured to activate the process gas, and a buffer part configured to form a buffer chamber accommodating at least a part of the plasma generation unit and include a gas supply hole through which the activated process gas is supplied to the substrate, wherein the buffer part includes a groove portion in which a part of the gas supply hole is cut out;
- processing the substrate in the process chamber;
- and
- unloading the substrate from the process chamber.
Dependencies are inferred from the claim text.