Showerhead, semicondcutor processing apparatus having the same and semiconductor process

A semiconductor processing apparatus comprising:

• a processing chamber;
• a substrate support being configured for supporting a semiconductor wafer disposed inside the processing chamber and;
• and
• a showerhead configured to be mounted on the processing chamber for providing a processing gas onto the semiconductor wafer, the showerhead comprising:
• a supply plenum;
• a faceplate disposed at a side of the supply plenum for providing the processing gas flowing from the supply plenum to the semiconductor wafer;
• and
• an electrode plate assembly disposed between a gas source and the supply plenum for providing the processing gas from the gas source to the supply plenum, the electrode plate assembly comprising:
• a first plate having a unitary construction and having a plurality of first gas holes;
• and
• a second plate having a unitary construction and having a plurality of second gas holes, wherein the second plate is located between the first plate and the supply plenum and separated from the first plate, and the plurality of second gas holes are partially overlapped but misaligned with the plurality of first gas holes.

A semiconductor process comprising:

• positioning a semiconductor wafer in a processing chamber;
• and
• providing a processing gas onto the semiconductor wafer inside the processing chamber through a showerhead, the showerhead comprising:
• a supply plenum;
• a faceplate disposed at a side of the supply plenum for providing the processing gas flowing from the supply plenum to the semiconductor wafer;
• and
• an electrode plate assembly disposed between a gas source and the supply plenum for providing the processing gas from the gas source to the supply plenum, the electrode plate assembly comprising:
• a first plate having a unitary construction and having a plurality of first gas holes;
• and
• a second plate having a unitary construction and having a plurality of second gas holes, the second plate being located between the first plate and the supply plenum and separated from the first plate;
• and
• tuning the processing gas by shifting the second plate relative to the first plate for making the plurality of second gas holes partially overlapped but misaligned with the plurality of first gas holes.