Composite Particles, Method of Refining and Use Thereof

A process of refining composite particles comprising single and aggregated particles to reduce large aggregates, comprising at least one step selected from the group consisting of (1) filtration;

• (2) bowl centrifuge;
• (3) fixed angle rotational centrifuge;
• (4) gravitational settling;
• (5) optimization of calcination and milling processes;
• and combinations thereof;
• wherein
• the single particles comprising core particles with surfaces covered by nanoparticles;
• the core particle is selected from the group consisting of silica, alumina, titania, zirconia, polymer particle, and combinations thereof;
• and
• the nanoparticle is selected from the compounds of a group consisting of zirconium, titanium, iron, manganese, zinc, cerium, yttrium, calcium, magnesium, fluorine, lanthanum, strontium nanoparticle, and combinations thereof.

A chemical mechanical planarization (CMP) polishing composition, comprising

• 0.01 wt % to 20 wt % of composite particles comprise single ceria coated silica particles and aggregated ceria coated silica particles;
• wherein less than 1 wt % of the composite particles are aggregated ceria coated silica particles comprising >5 single ceria coated silica particles;
• water;
• pH of the CMP composition ranges from about 2 to about 12;
• and
• optionally
• 0.0001 wt % to about 5 wt % of a pH adjusting agent selected from the group consisting of sodium hydroxide, cesium hydroxide, potassium hydroxide, cesium hydroxide, ammonium hydroxide, quaternary organic ammonium hydroxide, and combinations thereof;
• 0.000001 wt % to 0.5 wt % of a chemical additive elected from the group consisting of a compound having a functional group selected from the group consisting of organic carboxylic acids, amino acids, amidocarboxylic acids, N-acylamino acids, and their salts thereof;
• organic sulfonic acids and salts thereof;
• organic phosphonic acids and salts thereof;
• polymeric carboxylic acids and salts thereof;
• polymeric sulfonic acids and salts thereof;
• polymeric phosphonic acids and salts thereof;
• arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, substituted phenols, sulfonamides, thiols, polyols having hydroxyl groups, and combinations thereof;
• 0.0001 wt % to about 10 wt % of a surfactant selected from the group consisting of a). Non-ionic surface wetting agents;
• b). Anionic surface wetting agents;
• c). Cationic surface wetting agents;
• d). ampholytic surface wetting agents;
• and combinations thereof;
• 0.001 wt % to 5 wt % of water soluble polymer selected from the group consisting of anionic polymer, cationic polymer, non-ionic polymer, and combinations thereof;
• 0.01 wt % to 3.0 wt % of chelators;
• corrosion inhibitor;
• oxidizer;
• and
• biological growth inhibitor.

A polishing method for chemical mechanical planarization (CMP) of a semiconductor substrate comprising at least one surface having at least one oxide layer, comprising the steps of:

• a) contacting the at least one oxide layer with a polishing pad;
• b) delivering a CMP polishing composition to the at least one surface, and
• c) polishing the at least one oxide layer with the CMP polishing composition;
• wherein the CMP polishing composition comprises
• 0.01 wt % to 20 wt % of composite particles comprise single ceria coated silica particles and aggregated ceria coated silica particles;
• wherein less than 1 wt % of the composite particles are aggregated ceria coated silica particles comprising >5 single ceria coated silica particles;
• water;
• pH of the CMP composition ranges from about 2 to about 12;
• and
• optionally
• 0.0001 wt % to about 5 wt % of a pH adjusting agent selected from the group consisting of sodium hydroxide, cesium hydroxide, potassium hydroxide, cesium hydroxide, ammonium hydroxide, quaternary organic ammonium hydroxide, and combinations thereof;
• 0.000001 wt % to 0.5 wt % of a chemical additive elected from the group consisting of a compound having a functional group selected from the group consisting of organic carboxylic acids, amino acids, amidocarboxylic acids, N-acylamino acids, and their salts thereof;
• organic sulfonic acids and salts thereof;
• organic phosphonic acids and salts thereof;
• polymeric carboxylic acids and salts thereof;
• polymeric sulfonic acids and salts thereof;
• polymeric phosphonic acids and salts thereof;
• arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, substituted phenols, sulfonamides, thiols, polyols having hydroxyl groups, and combinations thereof;
• 0.0001 wt % to about 10 wt % of a surfactant selected from the group consisting of a). Non-ionic surface wetting agents;
• b). Anionic surface wetting agents;
• c). Cationic surface wetting agents;
• d). ampholytic surface wetting agents;
• and mixtures thereof;
• 0.001 wt % to 5 wt % of water soluble polymer comprising anionic polymer, cationic polymer, non-ionic polymer, and combinations thereof;
• 0.01 wt % to 3.0 wt % of chelators;
• corrosion inhibitor;
• oxidizer;
• and
• biological growth inhibitor.