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US 2017/0283254 A1Published application
Complementary metal oxide semiconductor (cmos) ultrasonic transducers and methods for forming the same
AssigneeButterfly Network, Inc.
InventorsJonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez
Life of this patent
Estimating the term…
Abstract
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
Claims28
An ultrasonic transducer apparatus, comprising:
- a bonded structure having:
- a substrate having a metal oxide semiconductor (MOS) integrated circuit and an electrode;
- a conductive membrane bonded to the substrate such that a sealed cavity exists between an uppermost portion of the substrate and a first side of the conductive membrane, thereby defining, at least in part, an ultrasonic transducer, with the sealed cavity disposed between the conductive membrane and the electrode;
- and
- the uppermost portion of the substrate providing an electrical connection between the MOS integrated circuit and the first side of the conductive membrane.
2 more elements
A method, comprising:
- bonding a first wafer to a semiconductor wafer, the semiconductor wafer having a metal oxide semiconductor (MOS) integrated circuit and an electrode;
- removing at least a portion of the first wafer to define a conductive membrane such that a sealed cavity exists between an uppermost portion of the semiconductor wafer and a first side of the conductive membrane, thereby defining, at least in part, an ultrasonic transducer, with the sealed cavity disposed between the conductive membrane and the electrode;
- and
- the uppermost portion of the semiconductor wafer providing an electrical connection between the MOS integrated circuit and the first side of the conductive membrane.
1 more element
An apparatus, comprising:
- a semiconductor wafer having an integrated circuit;
- an electrode;
- an insulating material having a cavity formed at least partially therein;
- a conductive layer contacting the insulating material, sealing the cavity and having a first side proximate the cavity and a second side distal the cavity, wherein the electrode, cavity, and conductive layer together define, at least in part, an ultrasonic transducer, with the cavity being between the electrode and the conductive layer;
- a conductive contact coupling the electrode to the integrated circuit;
- and
- a conductive plug embedded in the insulating material and terminating on the first side of the conductive layer proximate the cavity such that a surface of the conductive plug is bonded with the first side of the conductive layer, wherein the conductive plug electrically connects the conductive layer to the integrated circuit, and wherein the electrode and the conductive plug are electrically isolated from each other.
4 more elements
An apparatus, comprising:
- a semiconductor wafer having an integrated circuit;
- an electrode;
- an insulating material having a cavity formed at least partially therein;
- a conductive membrane contacting the insulating material, sealing the cavity and having a first side proximate the cavity and a second side distal the cavity, wherein the electrode, cavity, and conductive membrane together define, at least in part, an ultrasonic transducer, with the cavity being between the electrode and the conductive membrane;
- a conductive contact coupling the electrode to the integrated circuit;
- and
- a conductive plug embedded in the insulating material and terminating on the first side of the conductive membrane proximate the cavity without extending through the conductive membrane such that a surface of the conductive plug forms at least part of a bonding interface between the first side of the conductive membrane and the insulating material, the conductive plug electrically connecting the conductive membrane to the integrated circuit, wherein the electrode and the conductive plug are electrically isolated from each other, and wherein the apparatus lacks an electrode that is on the second side of the conductive membrane and that overlies the cavity.
4 more elements
Dependencies are inferred from the claim text.