Power Converting Device
AssigneeHitachi, Ltd.
InventorsJunichi SAKANO, Kohhei ONDA, Takeshi TAMAKOSHI
Life of this patent
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AssigneeHitachi, Ltd.
InventorsJunichi SAKANO, Kohhei ONDA, Takeshi TAMAKOSHI
Estimating the term…
By detecting a temperature abnormality of a power semiconductor by using the power semiconductor as a temperature sensor, it is possible to detect deterioration and an abnormality of elements, a drive circuit and a cooling system, prevent a failure during an operation by taking an appropriate measure in advance, and make a system operational life long. More specifically, a power converting device which includes the power semiconductor and an arithmetic operation circuit which gives a drive instruction to the power semiconductor detects the temperature abnormality of the power semiconductor based on the drive instruction of the power semiconductor and a delay time of a control drive voltage applied to the power semiconductor to protect the power converting device. The power converting device which includes the power semiconductor and the arithmetic operation circuit gives the drive instruction compares and determines a delay time of the drive instruction and a control voltage applied to the power semiconductor and a reference value, and changes at least one of the drive instruction and the drive voltage based on a result of the comparison and the determination.
A power converting device comprising:
Dependencies are inferred from the claim text.