Dual-thickness backgrinding tape for backgrinding bumped wafers

A method of backgrinding, comprising:

• providing a substrate having an active semiconductor top side surface including a plurality of chips each including at least one transistor and at least one metallization level with bond pads connected to nodes of said transistor and bumps on or coupled to said bond pads, and a back side surface;
• applying a dual-thickness backgrind (BG) tape over said top side surface of at least one said substrate, wherein said BG tape includes a thinner tape region having a first thickness having an area sized to accommodate said substrate therein and a thicker tape region along at least a periphery of said BG tape having a second thickness that is greater than said first thickness;
• placing said substrate with said BG tape thereon so that said top side surface is on a chuck table of a backgrind apparatus;
• backgrinding said back side surface of said substrate to reach a specified substrate thickness, and
• removing said BG tape from said top side surface.