US 2017/0271556 A1 · SEMICONDUCTOR STACKING STRUCTURE, AND METHOD AND APPARATUS FOR SEPARATING NITRIDE SEMICONDUCTOR LAYER USING SAME

Abstract

A semiconductor stacking structure according to the present invention comprises: a monocrystalline substrate which is disparate from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define a cavity between the inorganic thin film and the substrate, wherein at least a portion of the inorganic thin film is crystallized with a crystal structure that is the same as the substrate; and a nitride semiconductor layer which is grown from a crystallized inorganic thin film above the cavity. The method and apparatus for separating a nitride semiconductor layer according the present invention mechanically separate between the substrate and the nitride semiconductor layer. The mechanical separation can be performed by a method of separation of applying a vertical force to the substrate and the nitride semiconductor layer, a method of separation of applying a horizontal force, a method of separation of applying a force of a relative circular motion, and a combination thereof.

Claims27

Dependent claims

A semiconductor stacking structure, comprising:

a monocrystalline substrate of a heterogeneous material from nitride semiconductor;
an inorganic thin film formed on the substrate to define cavities between the inorganic thin film and the substrate, wherein at least a part of the inorganic thin film is crystalized with the same crystal structure as the substrate;
and
a nitride semiconductor layer grown from the crystalized inorganic thin film on the cavities.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

15/325,984Filed 13 Jul 2015

Priority

KR 10-2014-008850314 Jul 2014

Published

21 Sep 2017

Term ends

Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10H 20/815
Bodies: having stress relaxation structures, e.g. buffer layers
H10H 20/01335
With a substrate not being Group III-V materials: the light-emitting regions comprising nitride materials
H10H 20/018
Of bodies, e.g. forming semiconductor layers: bonding of wafers
H10H 20/82
Characterised by their shape, e.g. curved or truncated substrates: roughened surfaces, e.g. at the interface between epitaxial layers

Semiconductor stacking structure, and method and apparatus for separating nitride semiconductor layer using same

Life of this patent

Semiconductor stacking structure, and method and apparatus for separating nitride semiconductor layer using same

Life of this patent

Abstract

Claims27