Semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorMasayuki DOHI
Life of this patent
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Abstract
According to one embodiment, a semiconductor memory device includes a first tube, a case, a substrate, a memory, a controller, and a first layer. The case is connected to the first tube. The substrate includes a first portion inside the first tube. The first layer covers an inner face of the first tube, is interposed between the first portion and the first tube, and has a thermal conductivity higher than a thermal conductivity of the first tube.
Claims20
A semiconductor memory device comprising:
- a first tube;
- a case connected to the first tube;
- a substrate which includes a first portion inside the first tube, on which an electrode is mounted, and a second portion inside the case;
- a memory mounted on the substrate;
- a controller mounted on the substrate and configured to control the memory;
- and
- a first layer which covers at least a portion of an inner face of the first tube, is interposed between the first portion and the first tube, and has a thermal conductivity higher than a thermal conductivity of the first tube.
A semiconductor memory device being connectable to a host device including a socket which includes a terminal and conforms to a Universal Serial Bus (USB) standard, the semiconductor memory device comprising:
- a USB connector being insertable into the socket;
- a substrate including a first portion on which an electrode is mounted and a second portion on which a non-volatile memory and a controller controlling the non-volatile memory are mounted, the electrode being in contact with the terminal when the USB connector is inserted into the socket;
- and
- a case accommodating the second portion of the substrate therein, wherein
- the USB connector includes a tube which accommodates the first portion of the substrate therein and is connected to the case, and a layer which covers at least a portion of an inner face of the tube and has a thermal conductivity higher than a thermal conductivity of the tube.
Dependencies are inferred from the claim text.