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US 2017/0256712 A1Published application
Method for manufacturing electrode and resistive random access memory
AssigneeWinbond Electronics Corp.
InventorsYi-Chung Chen, Cheng-An Peng, Shuo-Che Chang, Sung-Ying Wen
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Abstract
A method for manufacturing an electrode including the following steps is provided. A conductive layer is formed on a base material. A radio frequency physical vapor deposition (RF PVD) transition metal compound layer is formed on the conductive layer by using a RF PVD. A sacrificial layer is formed on the RF PVD transition metal compound layer. A planarization process is performed to remove the sacrificial layer and a portion of the RF PVD transition metal compound layer.
Claims10
A method for manufacturing an electrode, comprising:
- forming a conductive layer on a base material;
- forming a radio frequency physical vapor deposition (RF PVD) transition metal compound layer on the conductive layer by using a RF PVD;
- forming a sacrificial layer on the RF PVD transition metal compound layer;
- and
- performing a planarization process to remove the sacrificial layer and a portion of the RF PVD transition metal compound layer.
2 more elements
A resistive random access memory, comprising:
- a base material;
- a lower electrode, comprising:
- a conductive layer disposed on the base material;
- and
- an RF PVD transition metal compound layer disposed on the conductive layer;
- a variable resistance layer disposed on the RF PVD transition metal compound layer;
- and
- an upper electrode disposed on the variable resistance layer.
5 more elements
Dependencies are inferred from the claim text.