Magnetic storage device and manufacturing method of magnetic storage device

A magnetic storage device comprising:

• a substrate;
• and
• a first magnetoresistive effect element and a second magnetoresistive effect element disposed, above the substrate, in an arrangement pattern including a plurality of arrangement areas, each of the first and second magnetoresistive effect elements including a first ferromagnetic layer, a second ferromagnetic layer, a third ferromagnetic layer, a first nonmagnetic layer, and a second nonmagnetic layer, the first nonmagnetic layer being disposed between the first ferromagnetic layer and the second ferromagnetic layer, and the second nonmagnetic layer being disposed between the second ferromagnetic layer and the third ferromagnetic layer and being configured to antiferromagnetically couple the second ferromagnetic layer and the third ferromagnetic layer,
• wherein a magnetization orientation of the third ferromagnetic layer of the first magnetoresistive effect element is antiparallel to a magnetization orientation of the third ferromagnetic layer of the second magnetoresistive effect element, and
• the first magnetoresistive effect element is disposed in an arrangement area randomly positioned with respect to an arrangement area in which the second magnetoresistive effect element is disposed.