Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer torque applications using a sacrificial oxide layer

A method for providing magnetic junction residing on a substrate and usable in a magnetic device, the method comprising:

• providing a pinned layer, the pinned layer being magnetic;
• providing a nonmagnetic spacer layer;
• and
• providing a free layer, the nonmagnetic spacer layer being between the pinned layer and the free layer, the free layer being magnetic and switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, wherein at least one of the step of providing the pinned layer and the step of providing the free layer further include
• providing a magnetic layer including B and at least one of Co and Fe, the magnetic layer being amorphous as-deposited;
• providing an MgO layer on the magnetic layer, the MgO layer having a first thickness of at least two Angstroms and not more than four Angstroms;
• depositing a sacrificial layer on the MgO layer, the sacrificial layer including at least one of Ta and W, the sacrificial layer having a second thickness of at least two Angstroms and not more than five Angstroms;
• performing at least one anneal of the magnetic layer, the MgO layer and the sacrificial layer at an anneal temperature greater than 350 degrees Celsius and not more than 400 degrees Celsius, the magnetic layer being at least partially crystallized after the at least one anneal;
• and
• removing the sacrificial layer and the MgO layer after the step of performing the at least one anneal.