Piezoelectric film, piezoelectric element including the same, and liquid discharge apparatus

A piezoelectric film formed by a vapor phase growth method, the piezoelectric film comprising:

• a perovskite oxide in which a perovskite oxide represented by the following formula P is doped with Si in an amount of from 0.2 mol % to less than 0.5 mol %, wherein a ratio of a peak intensity of a pyrochlore phase to a sum of peak intensities in respective plane orientations of (100), (001), (110), (101) and (111) of a perovskite phase measured by an X-ray diffraction method is 0.25 or less:
• A1+δ[(ZrxTi1−x)1−aNba]Oy Formula P
• wherein, in formula P, A is an A-site element primarily containing Pb;
• Zr, Ti, and Nb are B-site elements;
• x is more than 0 but less than 1;
• a is 0.1 or more but less than 0.3;
• and δ=0 and y=3 are standard, provided that these values may deviate from standard values in a range in which a perovskite structure is capable of being obtained.