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US 2017/0256677 A1Published application
Method for manufacturing nitride semiconductor template
AssigneeSumitomo Chemical Company, Limited
InventorHajime FUJIKURA
Life of this patent
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Abstract
There is provided a method for manufacturing a nitride semiconductor template, including the steps of: growing and forming a buffer layer to be thicker than a peak width of a projection and in a thickness of not less than 11 nm and not more than 400 nm on a sapphire substrate formed by arranging conical or pyramidal projections on its surface in a lattice pattern; and growing and forming a nitride semiconductor layer on the buffer layer.
Claims5
A method for manufacturing a nitride semiconductor template, comprising the steps of:
- growing and forming a buffer layer to be thicker than a peak width of a projection and in a thickness of not less than 11 nm and not more than 400 nm on a sapphire substrate formed by arranging conical or pyramidal projections on its surface in a lattice pattern;
- and
- growing and forming a nitride semiconductor layer on the buffer layer.
Dependencies are inferred from the claim text.