Oxide semiconductor device and method of manufacturing the same

A method of processing oxide-semiconductor devices, comprising:

• providing a substrate;
• forming oxide-semiconductor devices of same type on said substrate;
• forming an insulating layer over said oxide-semiconductor devices and said substrate;
• forming a first mask which defines a first implantation region on said insulating layer, wherein said first implantation region encompasses a plurality of said oxide-semiconductor devices;
• performing a first oxygen implantation process on said first implantation region;
• removing said first mask;
• forming a second mask which defines a second implantation region on said insulating layer, wherein said first implantation region encompasses a plurality of said oxide-semiconductor devices;
• performing a second oxygen implantation process on said second implantation region;
• patterning said insulating layer so that only said oxide-semiconductor devices are covered by said patterned insulating layer in both of the first implantation region and the second implantation region, wherein each of the individual patterned insulating layers is coextensive with a lateral width of each of said oxide semiconductor devices;
• and
• forming a top blocking film over said patterned insulating layer.