Ultra High Voltage Device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMING-FU TSAI, YU-TI SU, JEN-CHOU TSENG
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Abstract
According to an embodiment, a semiconductor device is provided. The device includes a second region having a greater curvature than a first region. The device includes an epitaxy layer of a first conductivity type, a well of a second conductivity type in the epitaxy layer, a drain in the epitaxy layer, a source in the well, and a bulk in the well and in contact with the source, the bulk having a greater area in the second region than in the first region.
Claims20
A semiconductor device having a first region and a second region, the second region having a greater curvature than the first region, the device comprising:
- an epitaxy layer of a first conductivity type in the first region and the second region;
- a well of a second conductivity type in the epitaxy layer, the second conductivity type being different than the first conductivity type;
- a first diffusion layer of the first conductivity type in the epitaxy layer;
- a second diffusion layer of the first conductivity type in the well;
- and
- a third diffusion layer of the second conductivity type in the well.
A semiconductor device having a first region and a second region, the second region having a greater curvature than the first region, the device comprising:
- an epitaxy layer of a first conductivity type in the first region and the second region;
- a well of a second conductivity type in the epitaxy layer, the second conductivity type being different than the first conductivity type;
- a drain in the epitaxy layer;
- a source in the well;
- and
- a bulk in the well and separated from the source, wherein a distance between the bulk and the source is smaller in the second region than in the first region.
A semiconductor device having a first region and a second region, the second region having a greater curvature than the first region, the device comprising:
- an epitaxy layer of a first conductivity type in the first region and the second region;
- a well of a second conductivity type in the epitaxy layer, the second conductivity type being different than the first conductivity type;
- a first diffusion layer of the first conductivity type in the epitaxy layer;
- a second diffusion layer of the first conductivity type in the well;
- and
- a third diffusion layer of the second conductivity type in the well and in contact with the second diffusion layer, wherein the third diffusion layer comprises a greater extension in the second region than in the first region.
Dependencies are inferred from the claim text.